April 2002
NDT2955
P-Channel Enhancement Mode Field Effect Transistor
General Description
This 60V P-Channel MOSFET is produced using
Fairchild Semiconductor’s high voltage Trench process.
It has been optimized for power management
plications.
Applications
? DC/DC converter
Features
? –2.5 A, –60 V. R DS(ON) = 300m ? @ V GS = –10 V
R DS(ON) = 500m ? @ V GS = –4.5 V
? High density cell design for extremely low R DS(ON)
? High power and current handling capability in a widely
used surface mount package.
?
Power management
D
S
D
D
S
D
SOT-223
G
D
G
D
S
SOT-223 *
(J23Z)
G
G
S
Absolute Maximum Ratings
T A =25 o C unless otherwise noted
Symbol
V DSS
V GSS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Ratings
–60
± 20
Units
V
V
I D
Drain Current
– Continuous
(Note 1a)
–2.5
A
– Pulsed
–15
P D
Maximum Power Dissipation
(Note 1a)
3.0
W
(Note 1b)
(Note 1c)
1.3
1.1
T J , T STG
Operating and Storage Junction Temperature Range
–55 to +150
° C
Thermal Characteristics
R θ JA
R θ JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
42
12
° C/W
Package Marking and Ordering Information
Device Marking
NDT2955
Device
NDT2955
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
? 2002 Fairchild Semiconductor Corporation
NDT2955 Rev. C
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相关代理商/技术参数
NDT2955(J23Z) 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 2.5A I(D) | SOT-223
NDT2955 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P-CH 60V 2.5A SOT-223 RL
NDT2955 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SOT-223
NDT2955_02 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:P-Channel Enhancement Mode Field Effect Transistor
NDT2955_F081 制造商:Fairchild Semiconductor 功能描述:NDT2955_F081
NDT2955_J23Z 功能描述:MOSFET P-Channel FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NDT2955_Q 功能描述:MOSFET SOT-223 P-CH ENHANCE RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NDT2955-CUT TAPE 制造商:FAIRCHILD 功能描述:NDT Series P-Channel 60 V 300 mO Field Effect Transistor SOT-223